Method to reduce etch variation using ion implantation

ABSTRACT

The present disclosure relates to a method of forming a transistor device. In this method, first and second well regions are formed within a semiconductor substrate. The first and second well regions have first and second etch rates, respectively, which are different from one another. Dopants are selectively implanted into the first well region to alter the first etch rate to make the first etch rate substantially equal to the second etch rate. The first, selectively implanted well region and the second well region are etched to form channel recesses having equal recess depths. An epitaxial growth process is performed to form one or more epitaxial layers within the channel recesses.

REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.15/043,759, filed on Feb. 15, 2016, which is a Continuation of U.S.application Ser. No. 14/175,194, filed on Feb. 7, 2014 (now U.S. Pat.No. 9,281,196, issued on Mar. 8, 2016), which claims the benefit of U.S.Provisional Application No. 61/922,149, filed on Dec. 31, 2013. Thecontents of the above-referenced Patent Applications are herebyincorporated by reference in their entirety.

FIELD

Modern day integrated circuits comprise millions or billions oftransistors. Transistors may be used for amplifying or switchingelectronic signals and/or to provide functionality to integratedcircuits. Transistors may be either n-type transistors or p-typetransistors. While transistors may be formed using various techniquesand materials, they require accurate and precise placement of theirvarious components and constituents to operate optimally andefficiently, especially as dimensions continue to shrink to meetadvanced integration requirements. One such constituent is the dopantimpurities that are introduced into the channel region because theydirectly influence the functionality and performance of the transistordevice. The characteristics and location of the dopant impurities (i.e.,the dopant profile) must be carefully controlled.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a flow diagram of some embodiments of a method oftransistor fabrication that uses implantation-assisted etching toimprove local and global voltage threshold variations.

FIGS. 2A-2C illustrate some embodiments method of transistor fabricationthat uses implantation-assisted etching to improve local and globalvoltage threshold variations.

FIGS. 3A-3C illustrate graphs showing doping concentration profiles andcorresponding recess depths formed by a predetermined etch process for achannel region of a transistor device.

FIG. 4 illustrates a flow diagram of some additional embodiments of amethod of forming a transistor device that uses implantation-assistedetching to improve local and global voltage threshold variations.

FIGS. 5-12 illustrate cross-sectional views of some embodiments of amethod of forming a transistor device using implantation-assistedetching, wherein an etch enhancer in the form of arsenic is used forselectively increasing an etch rate of pwell regions.

FIGS. 13-20 illustrate cross-sectional views of some embodiments of amethod of forming a transistor device using implantation-assistedetching, wherein an etch retarder in the form of boron is used forselectively DECREASING an etch rate of nwell regions.

FIGS. 21-25 illustrate cross-sectional views of some embodiments of amethod of forming a transistor device using implantation-assistedetching, wherein a blanket implant is used to alter the etch rates ofwell regions.

DETAILED DESCRIPTION

The description herein is made with reference to the drawings, whereinlike reference numerals are generally utilized to refer to like elementsthroughout, and wherein the various structures are not necessarily drawnto scale. In the following description, for purposes of explanation,numerous specific details are set forth in order to facilitateunderstanding. It may be evident, however, to one skilled in the art,that one or more aspects described herein may be practiced with a lesserdegree of these specific details. In other instances, known structuresand devices are shown in block diagram form to facilitate understanding.

Over the past few decades the semiconductor industry has made continualadvances in manufacturing technology (e.g., photolithography), whichhave allowed for a steady reduction in transistor device size.Decreasing the size of a transistor device while keeping a power densityconstant improves the performance of the transistor. However, in recentyears, as scaling has begun to reach the physical limitations ofmaterials, scaling has begun to cause a number of problems withtransistor devices.

One such problem is that as transistor gate lengths continue todecrease, local and global variations of transistor threshold voltageshave increased (i.e., worsened). This increase can stem, for example,from any number of separate processing operations that are used to formstructural features of transistor devices. One such processing operationis etching, which is used to remove or erode away regions from anintegrated chip workpiece at various stages of the manufacturingprocess. In some cases, it is ideal for an etch to have a uniformvertical etch profile over a large chip area such that the etch canprovide one or more recesses which have equal depths (i.e., recesseswhose lower surfaces are co-planar). Unfortunately, however, smalldoping differences in the regions to be removed by the etch can causecorresponding variations in etch rates for these regions andcorresponding recess depth variations on the chip. As feature sizesshrink, these recess depth variations can lead to gate structures and/orreplacement channels with different heights over the chip. Thesedifferent gate heights and/or different replacement channel heights cancause slight capacitance variations between transistors, and can alsocause issues with residue being more difficult to remove from topsurfaces of some gates (e.g., shorter gates). The end result is thattraditional processes have variations in transistor performance due tothese recess depth variations.

Accordingly, the present disclosure relates to techniques wherebyselective ion implantation is used to “tune” etch rates of regions to beetched. In some embodiments, the etch rates can be “tuned” so thatuniform etch profiles can be formed over a wafer surface. The improvedetch profile uniformity can improve overall device performance bymitigating local and global voltage threshold variations.

FIG. 1 illustrates a flow diagram of some embodiments of a method 100 ofimplantation-assisted etching configured to augment device performanceby improving local and/or global variations of voltage threshold betweentransistor devices.

At 102, a semiconductor substrate is provided. In an exemplaryembodiment, the semiconductor substrate is a bulk silicon substrate.However, the semiconductor substrate may comprise any type ofsemiconductor body (e.g., silicon, silicon-germanium,silicon-on-insulator), which can include doped regions formed thereinand other conductive and/or dielectric regions formed thereover.

At 104, first and second well regions, which have differences in doping,are formed within the semiconductor substrate. The differences in dopingcan cause the first and second well regions to have different etch ratesrelative to a predetermined etch process. The differences in doping canmanifest themselves in a number of ways. For example, the first wellregion can be n-type and the second well region can be p-type, or thefirst and second well regions can both have the same doping type withdifferent dopant concentrations.

To “tune” the etch rates of the first and second well regions, at 106dopants are selectively implanted into at least one of the well regionsto alter its etch rate to make it substantially equal to that of theother well region. For example, in one embodiment, if a first etch rateof the first well region is initially less than a second etch rate ofthe second well region, dopants can be selectively implanted into thefirst well region to increase the first etch rate until it equals thesecond etch rate. Alternatively, dopants could be selectively implantedinto the second well region to decrease or retard the second etch rateuntil it equals the first etch rate. Dopants can also be implanted intothe first and second well regions to tune the first and second etchrates (e.g., in different directions) to make the etch rates equal.

At 108, after the etch rates of the first and second well regions havebeen “tuned” by selective ion implantation, the first and second wellregions are concurrently etched to form channel recesses in the firstand second well regions by using the predetermined etch process. Therecesses formed by this process have the same depth over the first andsecond well regions. In other words, the recesses formed in the firstand second well regions can have lower surfaces that lie on a commonplane.

At 110, an epitaxial growth process is performed to form epitaxial filmstacks within the channel recesses. An epitaxial film stack comprisesone or more epitaxial layers that are formed within the channelrecesses. In some embodiments, the epitaxial film stack may comprisesilicon. In some embodiments, the epitaxial film stack may comprise acarbon doped epitaxial layer and an un-doped epitaxial layer. The carbondoped epitaxial layer may be epitaxially grown onto a bottom surface ofthe recess at a position overlying the silicon carbon implantationregion. The un-doped epitaxial layer may be epitaxially grown onto thecarbon doped epitaxial layer.

This “implant tuned” etch procedure and subsequent epitaxial growth isadvantageous over traditional methods. By tuning the etch rates of thefirst and/or second well regions by ion implantation, the method of FIG.1 reduces variations in recess depths, and thereby provides epitaxialfilms with more uniform heights. This more uniform height provides moreuniform transistor operation performance than previously achievable. Forexample, these techniques can provide more uniform threshold voltagesfor transistors over a wafer, as well as providing improved devicespeeds for typical transistors on the wafer. Further, compared toconventional replacement channel approaches where a capacitancevariation over transistors on a wafer can be in the range of 30-60%,some embodiments of the present disclosure can reduce this capacitancevariation to less than 10% over the transistors on the wafer.

FIGS. 2A-2C illustrate some embodiments of an integrated circuit (IC)workpiece 200 which makes use of implant assisted etching techniques tolimit transistor variation. In particular, FIG. 2A illustrates the ICworkpiece after selective ion implantation has been performed but priorto an etch, and FIG. 2B illustrates the IC workpiece after the etch hasbeen carried out and after an epitaxial layer has been grown. FIG. 2Cshows the IC workpiece after additional device features have beenformed. These structures are described in greater detail below.

As shown in FIG. 2A, the IC workpiece 200 includes a semiconductorsubstrate 202 (e.g., a silicon substrate). A plurality of isolationstructures 204 may be disposed within the semiconductor substrate 202 atpositions that separate the semiconductor substrate 202 into alternatingactive regions 206. The illustrated isolation structures 204 a-204 d areconfigured to prevent current leakage between adjacent transistordevices in active regions 206 a-206 c. In some embodiments, theisolation structures 204 a-204 d comprise shallow trench isolation (STI)structures having a dielectric material disposed within a trench in thesemiconductor substrate 202.

In the illustrated implementation, each of the active regions 206 has awell 208, which has a doping profile corresponding to a different typeof transistor device. For example, first active region 206 a can includea first well region 208 a made up of dopants having a first conductivitytype (e.g., p-type) at a higher doping concentration. Hence, this firstwell region 208 a facilitates formation of one or more high thresholdvoltage transistors (e.g., high-V_(T) NMOS) in the first active region206 a.

Second active region 206 b can include a second well region 208 b madeup of dopants having the first conductivity type (e.g., p-type) at asecond doping concentration, which is less than the first dopingconcentration. Hence, this second well region 208 b facilitatesformation of one or more low threshold voltage transistors (e.g.,low-V_(T) NMOS). Third active region 206 c can include a third wellregion 208 c made up of dopants having the second conductivity type(e.g., n-type). Thus, the third well region 208 c can facilitateformation of one or more transistors of the first conductivity type(e.g., PMOS).

Due to the doping differences between the first, second, and third wellregions 208 a-208 c; the first, second, and third well regions 208 a-208c as initially formed have different etch rates, as measured from aninitial etch surface 214. For example, if the native first, second, andthird well regions were etched simultaneously as initially formed, thefirst well region 208 a would be etched as shown by 210 a to give way toa first channel recess having a first depth 212 a; the second wellregion 208 b would be etched as shown by 210 b to give way to a secondchannel recess having a second depth 212 b; and the third well region208 c would be etched as shown by 210 c to give way to a third channelrecess having a third depth 212 c. As mentioned above, these differentdepth recesses could cause undesired variations in device performance.

Therefore, to mitigate this recess depth variation, selective ionimplantation is used to tune the etch rates for sacrificial upperregions of one or more of the wells. Thus, in the illustratedimplementation, to increase the etch rate for the high VT NMOS activeregion 206 a, an n-type dopant region can be implanted into asacrificial upper region 211 a of the first p-well 208 a. For example,Arsenic impurities can be implanted into the sacrificial region 211 a offirst p-well 208 a to enhance its etching rate, as shown by arrow 213 a.Further, to decrease the etch rate for PMOS active region 208 c, ap-type dopant can be implanted into a sacrificial upper region 211 c ofthe n-well region 208 c. For example, boron impurities can be implantedinto the sacrificial upper region 211 c of the n-well region 208 c toretard its etching rate, as shown by arrow 213 c.

In FIG. 2B, the IC workpiece of FIG. 2A has been subjected to an etchprocess to form recesses 216 a-216 c. Because of the implantation-tuningthat was applied, the recesses 216 a-216 c have the same depth, suchthat lower surfaces of the recess lie on a common plane 212 b. In someembodiments, this etch completely removes the dopants that wereselectively implanted into the sacrificial well regions 211 for tuningpurposes. However, in other embodiments some of the selectivelyimplanted dopants are left near upper regions of the well regions.

Epitaxial film stacks 218 a, 218 b, 218 c are formed within the recesses216 a, 216 b, 216 c. In some embodiments, an epitaxial film stackcomprises a carbon doped epitaxial layer 220 disposed within a recess216. In some embodiments, the epitaxial film stack further comprises anlightly-doped epitaxial layer 222 (e.g., an epitaxial layer grownwithout doping, but having a low doping concentration due to backdiffusion of dopants from the substrate 202) disposed within the recess216 at a position overlying the carbon doped epitaxial layer 220.

As shown in FIG. 2C, gate structures 224 are disposed onto thesemiconductor substrate 200 at a position overlying the lightly-dopedepitaxial layer 222. In some embodiments, the gate structure 224 maycomprise a stacked gate dielectric layer 226 and a gate electrode layer228. The gate dielectric layer 226 (e.g., a silicon dioxide layer, ahigh-k dielectric layer, etc.) is disposed onto the lightly-dopedepitaxial layer 222. The gate electrode layer 228 (e.g., a poly-siliconlayer, a replacement metal gate layer, etc.) is disposed onto the gatedielectric layer 226. In some embodiments, sidewall spacers (not shown)are located on opposing sides of the gate structure 224. Source/drainregions 230 are then formed about edges of the gate structure 224. Thus,the epitaxial layer 218, which may comprise lightly doped silicon, canact as a channel region between the source/drain regions 230. In someembodiments, the channel region may comprise a first doping type (e.g.,a p-type doping for an NMOS transistor). In such embodiments, the sourceregion 230 and the drain region 230 may comprise a second doping type(e.g., an n-type doping).

FIGS. 3A-3C illustrate graphs, 300 and 310, showing some embodiments ofdoping concentration profiles (y-axis) as a function of a depth into asemiconductor substrate (x-axis)(e.g., taken along cross-sectional lineas shown in FIG. 2A).

The left-hand graph of FIG. 3A illustrates a p-type doping concentrationprofile 302 of a p-well as a function of depth. The p-type dopingconcentration profile 302 follows a Gaussian distribution which has apeak dopant concentration of approximately 1×10¹⁹ impurities/cm³ at adepth of between approximately 12 nm and approximately 15 nm. At a depthof approximately 10 nm the dopant concentration is approximately 1×10¹⁸impurities/cm³; while at a depth of approximately 18 nm the dopantconcentration is 1×10¹⁶ impurities/cm³. As shown in the right-hand graphof FIG. 3A, when the structure of FIG. 3A is subjected to apredetermined etch process, a recess having a depth 306 of betweenapproximately 14 nm and approximately 15 nm is formed.

In the left-hand graph of FIG. 3B, a shallow arsenic dopant implant 310has been implanted into the p-well 302 of FIG. 3A to enhance the etchingrate of the p-well. For example, in some embodiments, arsenic ions canbe implanted into solely an upper sacrificial pwell region 312. Theseions can be implanted using an energy of approximately 20 keV and across-sectional density of approximately 5×10¹³ impurities/cm² toachieve a peak dopant concentration of approximately 2×10¹⁹impurities/cm³ at a depth of approximately 13 nm. Thus, when FIG. 3B'sp-well 302 with its shallow arsenic dopant implant 310 is etched usingthe same predetermined etch process as used in FIG. 3A, a recess havinga total depth 314 of approximately 15 nm to approximately 16 nm isformed, as shown by right-hand portion of FIG. 3B. Notably, in FIG. 3B,the etch is sufficient to remove all of the upper sacrificial pwellregion 312 which contains the arsensic dopants, such that the dopingprofile for the remaining p-well 316 after the etch does not need to beadjusted to account for arsenic dopants.

In the left-hand graph of FIG. 3C, a deep arsenic dopant implant 318 hasbeen implanted into the p-well of FIG. 3A to enhance the etching rate ofthe p-well. For example, in some embodiments, arsenic ions can beimplanted into both an upper sacrificial pwell region 322 as well as anon-sacrificial pwell region 326. In FIG. 3C's example, these ions canbe implanted using an energy of approximately 30 keV and across-sectional density of approximately 5×10¹³ impurities/cm² toachieve a dopant concentration of approximately slightly less than2×10¹⁹ impurities/cm³ at a depth of between 13 nm and 14 nm. Thus, whenFIG. 3C's p-well with its deep arsenic dopant implant is etched usingthe same predetermined etch process as used in FIG. 3A, a recess havinga depth of approximately 16 nm is formed, as shown by the right-handportion of FIG. 3C. Notably, as shown in the right-hand portion of FIG.3C, the etch is sufficient to remove the upper sacrificial pwell region322, but still leaves both the non-sacrificial p-well region 324 witharsenic atoms and the native pwell region 326 in place. Hence, when thep-well region is initially formed, the doping profile for the p-wellought to take into account these expected arsenic atoms 324 forcalculating threshold voltages and other device parameters.

Although FIGS. 3A-3C illustrate some examples of implant-assistedetching where recess depths are selectively increased for a p-well byusing arsenic atoms, it will be appreciated that other implant assistedetching techniques also fall within the scope of this disclosure. Forexample, in the context of n-wells, boron atoms can be used toselectively retard recess depths compared to n-wells without such boronimpurities. Other dopants could also be used.

FIG. 4 illustrates a flow diagram of some additional embodiments of amethod 400 of forming a transistor device using implant assisted etchingto improve local and global voltage threshold variations. Whiledisclosed methods (e.g., methods 100 and 400) are illustrated anddescribed below as a series of acts or events, it will be appreciatedthat the illustrated ordering of such acts or events are not to beinterpreted in a limiting sense. For example, some acts may occur indifferent orders and/or concurrently with other acts or events apartfrom those illustrated and/or described herein. In addition, not allillustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 402, a semiconductor substrate is provided. In various embodiments,the semiconductor substrate may comprise any type of semiconductor body(e.g., silicon, silicon-germanium, silicon-on-insulator, etc.) such as asemiconductor wafer and/or one or more die on a semiconductor wafer, aswell as any other type of semiconductor and/or epitaxial layersassociated therewith.

At 404, an implantation process is performed to introduce n-type dopantsinto the semiconductor substrate to form an nwell in the substrate. Then-well is structured to have a p-type transistor (e.g., a PMOStransistor) formed thereon. Due to its particular dopingcharacteristics, the nwell has a first etching rate for a predeterminedetch procedure.

At 406, an implantation process is performed to introduce p-type dopantsinto the semiconductor substrate to form a first pwell having a firstp-type dopant concentration in the substrate. The first p-well isstructured to have a low-V_(t) n-type transistor (e.g., a low-VT NMOStransistor) formed thereon. The first pwell has a second etching rate,which is less than the first etching rate, for the predetermined etchprocedure.

At 408, to increase the etch rate of the first pwell to match that ofthe nwell, arsenic is implanted into the first pwell at a firstpredetermined concentration. In some embodiments, the arsenic can beimplanted shallowly so it resides solely in a sacrificial region of thefirst pwell that will be entirely removed during etching. In otherembodiments, the arsenic can be implanted deeper so it resides in both asacrificial region of the first pwell to be entirely removed duringetching as well as a non-sacrificial region of the first pwell that willremain in place after the etching.

At 410, an implantation process is performed to introduce p-type dopantsinto the semiconductor substrate to form a second pwell having a secondp-type dopant concentration that is greater than the first p-type dopantconcentration. The second p-well is structured to have a high-V_(t)n-type transistor (e.g., a high-VT NMOS transistor) formed thereon. Dueto its doping characteristics, the second pwell has a third etchingrate, which is less than the second etching rate, for the predeterminedetch procedure.

At 412, to increase the etch rate of the second pwell to match that ofthe nwell and tuned first pwell, arsenic is implanted into the secondpwell at a second predetermined concentration, which is greater than thefirst predetermined concentration. In some embodiments, the arsenic canbe implanted more deeply than for the tuned pwell to help enhanceetching.

Although not expressly illustrated in FIG. 4, an anneal operation can becarried out after 412 to repair any damage due to the ion implantationand to activate the implanted dopant impurities. The anneal operationcan also be carried out in separate acts after formation of each nwelland each pwell in other implementations.

In 414, a sacrificial oxide layer is removed from upper regions of thenwell and pwell structures. This can be removed, for example, by wetetching or by reactive ion etching, for example.

In 416, the nwell, first pwell and second pwell are concurrently etchedto form recesses in the substrate. Because of the implantation-assistedtechniques used, the recesses have uniform depths. To further help withgate height variation and to maintain super steep channel dopingprofiles, the recess can be less than 18 nm in height in someembodiments.

At 418 Si or SiC epitaxial layers are grown in the Si recesses. These Sior SiC epitaxial layers act as a channel region for transistors to beformed.

In 420, a gate dielectric and conductive gate electrode are formed overthe Si/SiC epi layers. Other device features, such as source/drainregions on opposite sides of the gate electrode, contacts, and the like,are then formed.

FIGS. 5-12 illustrate some embodiments of cross-sectional views of asemiconductor substrate showing a method of forming a transistor device.In particular, FIGS. 5-12 show an example where an etch enhancer in theform of arsenic, for example, enhances the etch rate for pwell regions.Although FIGS. 5-12 are described in relation to method 400, it will beappreciated that the structures disclosed in FIGS. 5-12 are not limitedto such a method.

FIG. 5 illustrates a cross-sectional view 500 of some embodiments of asemiconductor substrate 500 corresponding to acts 402-420. The substrate500 includes a plurality of isolation structures 502, which may be atpositions that separate the semiconductor substrate 500 into alternatingactive regions 504. An nwell mask 506 is formed over some active regionswhile leaving other active regions exposed (here PMOS region 508 isexposed). With the nwell mask 506 in place, a voltage threshold(V_(t))/nwell implant 510 is performed on the semiconductor substrate500. The V_(t)/well implant 510 is configured to introduce n-typedopants into the semiconductor substrate 500 to adjust the V_(t)(threshold voltage) applied to a transistor to allow current to flow ina channel region. In some embodiments, the V_(t)/nwell implant 510 mayintroduce an n-type dopant (e.g., phosphorous, antimony, or arsenic)into the semiconductor substrate 500. In various embodiments, theV_(t)/nwell implant 510 may use an implant energy of betweenapproximately 10 keV (electron volts) and approximately 1000 keV.

As shown in FIG. 6, a first pwell mask 602 is formed over some activeregions while leaving other active regions exposed (here low-Vt NMOSregion 604 is exposed).

With the first pwell mask 602 in place, a voltage threshold(V_(t))/first pwell implant 606 is performed on the semiconductorsubstrate 500. The V_(t)/first pwell implant 606 is configured tointroduce p-type dopants into the semiconductor substrate 500 to adjustthe V_(t) (threshold voltage) applied to a transistor to allow currentto flow in a channel region. In various embodiments, the V_(t)/firstpwell implant 606 may use an implant energy of between approximately 10keV (electron volts) and approximately 1000 keV.

As shown in FIG. 7, because the first pwell may initially have adifferent etching rate relative to nwell, an etch enhancement implantmay be carried out with the first pwell mask 602 in place. This etchenhancement implant 608, such as Arsenic, can be implanted at a dosagesufficient to bring the etching rate of the first pwell 607 in line withthat of the nwell 507.

In FIG. 8, a second pwell mask 800 is formed over some active regionswhile leaving other active regions exposed (here high-Vt NMOS region 802is exposed). With the second pwell mask 800 in place, a voltagethreshold (V_(t))/second pwell implantation 804 is performed on thesemiconductor substrate 500. The V_(t)/second pwell implant 804 isconfigured to introduce p-type dopants into the semiconductor substrate500 to adjust the V_(t) (threshold voltage) applied to a transistor toallow current to flow in a channel region. In various embodiments, theV_(t)/second pwell implantation 804 may use an implant energy of betweenapproximately 10 keV (electron volts) and approximately 1000 k eV.

As shown in FIG. 9, because the second pwell 807 may initially have adifferent etching rate relative to nwell 507 and/or pwell 607, an etchenhancement implant 902 may be carried out with the second pwell mask800 in place. This etch enhancement implant 902, such as arsenic, can beimplanted at a dosage sufficient to bring the etching rate of the secondpwell 807 in line with that of the nwell 507 and/or first pwell 607.

Although not shown, a well anneal process is performed to activate theimplanted dopants introduced by the V_(t)/well implantations. The wellanneal process is performed by exposing the semiconductor substrate 504to an elevated temperature (e.g., greater than or equal to 400° C.). Thewell anneal process may also cure crystalline defects and/or causediffusion and redistribution of dopant impurities to drive the implanteddopants deeper into the semiconductor substrate.

In FIG. 10, after the anneal process, a sacrificial oxide is removedfrom over each of the well regions.

In FIG. 11, a predetermined etch 1100 is carried out to concurrentlyetch the nwell region 507, the first pwell region 607 and the secondpwell region 807. In some embodiments, the etch 1100 may be configuredto remove a predetermined thickness of a portion of the semiconductorsubstrate 500 that is between approximately 5 nm and approximately 20nm, for example. In some embodiments, the etchant 1100 may comprise acombination of a dry etchant (e.g., an ion bombardment) and a wetetchant (e.g., Tetramethylammonium hydroxide (TMAH), potassium hydroxide(KOH), etc.).

As shown in FIG. 12, a silicon carbide (SiC) layer 1202 is epitaxiallygrown within the recess. In some embodiments, the SiC layer 1202 may beepitaxially grown to a thickness having a range of between approximately2 nm and approximately 20 nm. The silicon carbide (SiC) layer 1202 isun-doped. An un-doped silicon layer 1204 is epitaxially grown within therecess at a position overlying the SiC layer 1202. The un-doped siliconlayer 1204 may be epitaxially grown to a thickness of betweenapproximately 5 nm and approximately 20 nm.

FIGS. 13-20 illustrate some embodiments of cross-sectional views of asemiconductor substrate showing a method of forming a transistor device.In particular, FIGS. 13-20 show an example where an etch retarder in theform of boron, for example, decreases the etch rate for nwell regions.Although FIGS. 13-20 are described in relation to method 400, it will beappreciated that the structures disclosed in FIGS. 13-20 are not limitedto such a method.

FIG. 13 illustrates a cross-sectional view of some embodiments of asemiconductor substrate 500. A plurality of isolation structures may bedisposed within the semiconductor substrate at positions that separatethe semiconductor substrate 202 into alternating active regions. Annwell mask is formed over some active regions while leaving other activeregions exposed (here PMOS region is exposed). With the nwell mask inplace, a voltage threshold (V_(t))/nwell implant 1300 is performed onthe semiconductor substrate. The V_(t)/well implant 1300 is configuredto introduce n-type dopants into the semiconductor substrate to adjustthe V_(t) (threshold voltage) applied to a transistor to allow currentto flow in a channel region. In some embodiments, the V_(t)/nwellimplant 1300 may introduce an n-type dopant (e.g., phosphorous,antimony, or arsenic) into the semiconductor substrate. In variousembodiments, the V_(t)/nwell implantation may use an implant energy ofbetween approximately 10 keV (electron volts) and approximately 1000keV.

Because the nwell is expected to have a relatively large etch ratecompared to the pwell regions, FIG. 14 shows implantation 1400 of ap-type dopant, such as boron, into the nwell. This p-type dopant isimplanted at a concentration that is expected to match the etch rate ofthe nwell to that of pwell regions in the substrate after tuning.

As shown in FIG. 15, a first pwell mask is formed over some activeregions while leaving other active regions exposed (here low-Vt NMOSregion is exposed). With the first pwell mask in place, a voltagethreshold (V_(t))/first pwell implantation 1500 is performed on thesemiconductor substrate. The V_(t)/first pwell implantation 1500 isconfigured to introduce p-type dopants into the semiconductor substrateto adjust the V_(t) (threshold voltage) applied to a transistor to allowcurrent to flow in a channel region. In various embodiments, theV_(t)/first pwell implantation 1500 may use an implant energy of betweenapproximately 10 keV (electron volts) and approximately 1000 keV.

In FIG. 16, a second pwell mask is formed over some active regions whileleaving other active regions exposed (here high-Vt NMOS region isexposed). With the second pwell mask in place, a voltage threshold(V_(t))/second pwell implantation 1600 is performed on the semiconductorsubstrate. The V_(t)/second pwell implantation 1600 is configured tointroduce p-type dopants into the semiconductor substrate to adjust theV_(t) (threshold voltage) applied to a transistor to allow current toflow in a channel region. In various embodiments, the V_(t)/second pwellimplantation 1600 may use an implant energy of between approximately 10keV (electron volts) and approximately 1000 keV.

As shown in FIG. 17, because the second pwell may initially have aslower etching rate relative to the first pwell, an etch enhancementimplant 1700 may be carried out with the second pwell mask in place.This etch enhancement implant 1700, such as arsenic, can be implanted ata dosage sufficient to bring the etching rate of the second pwell inline with that of the first pwell.

Although not shown, a well anneal process is performed to activate theimplanted dopants introduce by the V_(t)/well implantations. The wellanneal process is performed by exposing the semiconductor substrate 504to an elevated temperature (e.g., greater than or equal to 400° C.). Thewell anneal process may also cure crystalline defects and/or causediffusion and redistribution of dopant impurities to drive the implanteddopants deeper into the semiconductor substrate.

In FIG. 18, a sacrificial oxide is removed from over each of the wellregions.

In FIG. 19, a predetermined etch 1900 is carried out to concurrentlyetch the nwell region, the first pwell region and the second pwellregion. In some embodiments, the etch 702 may be configured to remove athickness of a portion of the semiconductor substrate that is betweenapproximately 5 nm and approximately 20 nm, for example. In someembodiments, the etchant 1900 may comprise a combination of a dryetchant (e.g., an ion bombardment) and a wet etchant (e.g.,Tetramethylammonium hydroxide (TMAH), potassium hydroxide (KOH), etc.).

As shown in FIG. 20, one or more epitaxial layers 2000, such as asilicon carbide (SiC) layer and an un-doped silicon layer areepitaxially grown within the recess.

FIGS. 21-25 show an alternative process flow whereby a blanket implantis used to tune the etch rates of the well regions. Thus, FIG. 21 showsa first pwell region in which a high-VT NMOS device is to be formed, asecond pwell region in which a low-VT NMOS device is to be formed, andan n-well region in which a PMOS device is to be formed.

In FIG. 22, a blanket implant is provided. In some embodiments, theblanket implant is a pwell etch-enhancing implant, such as an arsenicimplant, to enhance the recess etch for the p-well regions. In otherembodiments, the blanket implant is an nwell etch-retarding implant,such as a BF2, C, or boron, implant, to retard the recess etch for then-well region.

In FIG. 23, after the blanket implant is provided, the sacrificial oxideis removed. In FIG. 24, the nwell and pwell regions are simultaneouslyetched to form recesses having a uniform recess depth in the substrate.In FIG. 25, a silicon carbide (SiC) layer is epitaxially grown withinthe recess, and an un-doped silicon layer is epitaxially grown withinthe recess at a position overlying the SiC layer.

It will be appreciated that while reference is made throughout thisdocument to exemplary structures in discussing aspects of methodologiesdescribed herein, that those methodologies are not to be limited by thecorresponding structures presented. Rather, the methodologies (andstructures) are to be considered independent of one another and able tostand alone and be practiced without regard to any of the particularaspects depicted in the Figs. Additionally, layers described herein, canbe formed in any suitable manner, such as with spin on, sputtering,growth and/or deposition techniques, etc.

Also, equivalent alterations and/or modifications may occur to thoseskilled in the art based upon a reading and/or understanding of thespecification and annexed drawings. The disclosure herein includes allsuch modifications and alterations and is generally not intended to belimited thereby. For example, although the figures provided herein, areillustrated and described to have a particular doping type, it will beappreciated that alternative doping types may be utilized as will beappreciated by one of ordinary skill in the art.

In addition, while a particular feature or aspect may have beendisclosed with respect to only one of several implementations, suchfeature or aspect may be combined with one or more other features and/oraspects of other implementations as may be desired. Furthermore, to theextent that the terms “includes”, “having”, “has”, “with”, and/orvariants thereof are used herein, such terms are intended to beinclusive in meaning—like “comprising.” Also, “exemplary” is merelymeant to mean an example, rather than the best. It is also to beappreciated that features, layers and/or elements depicted herein areillustrated with particular dimensions and/or orientations relative toone another for purposes of simplicity and ease of understanding, andthat the actual dimensions and/or orientations may differ substantiallyfrom that illustrated herein.

The present disclosure relates to a method of forming a transistordevice having a carbon implantation region configured to provide for alow variation of voltage threshold. In particular, “implant tuned” etchprocedures are used to reduce variations in recess depths, and therebysubsequently grown epitaxial films formed in the recesses can have moreuniform heights than previously achievable. This more uniform heightprovides more uniform transistor operation performance than previouslyachievable. For example, these techniques can provide more uniformthreshold voltages for transistors over a wafer, as well as providingimproved device speeds for typical transistors on the wafer.

Some embodiments of the present disclosure relate to a method of forminga transistor device. In this method, first and second well regions areformed within a semiconductor substrate. The first and second wellregions have first and second etch rates, respectively, which aredifferent from one another. Dopants are selectively implanted into thefirst well region to alter the first etch rate to make the first etchrate substantially equal to the second etch rate. The first, selectivelyimplanted well region and the second well region are etched to formchannel recesses having equal recess depths. An epitaxial growth processis performed to form one or more epitaxial layers within the channelrecesses.

In other embodiments, the present disclosure relates to a method offorming a transistor device. In this method, a first well region isformed in a substrate. A second well region is also formed in thesubstrate. The second well region has a doping characteristic thatdiffers from that of the first well region. Dopants are implanted into asacrificial region of the first well region to alter an etch rate of thesacrificial region of the first well. The first, selectively implantedwell region and the second well region are concurrently etched to removethe sacrificial region of the first well region and to concurrentlyremove a region of the second well region having a same height as thesacrificial region to form channel recesses in the first and second wellregions having equal recess depths.

Yet other embodiments relate to a method of forming a transistor device.A first pwell region is formed in a substrate. A second well region isalso formed in the substrate. The second well region has a dopingcharacteristic that differs from that of the first pwell region. Etchenhancing dopants are implanted into a sacrificial region of the firstpwell region to increase an etch rate of the sacrificial region of thefirst pwell for a predetermined etch procedure. Both the sacrificialregion of the first pwell region and the second well region areconcurrently etched with the predetermined etch procedure to remove thesacrificial region of the first pwell region and to concurrently removea region of the second well region having a same height as thesacrificial region to form channel recesses in the first and second wellregions having equal recess depths.

What is claimed is:
 1. A method of forming a transistor device,comprising: forming first and second doped regions within asemiconductor substrate, the first and second doped regions having firstand second etch rates, respectively, which are different from oneanother for a pre-determined etch; selectively implanting dopant atomsinto the first doped region to alter the first etch rate such that thealtered first etch rate is substantially equal to the second etch rate;and etching both the first, selectively implanted doped region and thesecond doped region using the pre-determined etch to form recesseshaving equal recess depths.
 2. The method of claim 1, furthercomprising: performing an epitaxial growth process to form one or moreepitaxial layers having equal respective heights within the recesses. 3.The method of claim 1, wherein etching the first, selectively implanteddoped region and the second doped region removes substantially all ofthe selectively implanted dopants from the first selectively implanteddoped region.
 4. The method of claim 1, wherein the first doped regionhas a first doping type and the second doped region has a second,opposite doping type.
 5. The method of claim 1, wherein the first dopedregion has a first doping type at a first doping concentration and thesecond doped region has the first doping type at a second dopingconcentration that differs from the first doping concentration.
 6. Themethod of claim 1, wherein the dopants are selectively implanted throughan opening in a mask into the first doped region while being blockedfrom entering the second doped region by the mask.
 7. A method offorming a transistor device, comprising: forming first and second dopedregions within a semiconductor substrate, the first and second dopedregions having first and second etch rates, respectively, which aredifferent from one another for a pre-determined etch; selectivelyimplanting dopant atoms into the first doped region to alter the firstetch rate such that the altered first etch rate is substantially equalto the second etch rate; and etching both the first, selectivelyimplanted doped region and the second doped region using thepre-determined etch to remove a first depth of material from the first,selectively implanted doped region and to remove a second depth ofmaterial from the second doped region, the first depth being equal tothe second depth.
 8. The method of claim 7, wherein etching the first,selectively implanted doped region and the second doped region removessubstantially all of the selectively implanted dopants from the firstselectively implanted doped region.
 9. The method of claim 7, whereinthe first semiconductor region has a first doping conductivity type andthe second semiconductor region also has the doping conductivity type.10. The method of claim 7, further comprising: performing an epitaxialgrowth process to form one or more epitaxial layers within the recesses.11. The method of claim 10, wherein the one or more epitaxial layershave a total thickness of approximately 20 nanometers or less.
 12. Themethod of claim 10, further comprising: forming a gate dielectric layerover the one or more epitaxial layers; and forming a conductive gateelectrode layer over the gate dielectric layer.
 13. The method of claim12, further comprising: forming a source region and a drain region inthe first semiconductor region or in the second semiconductor regionabout opposite edges of the gate electrode, such that a channel regioncomprising the one or more epitaxial layers is arranged under the gateelectrode and separates the source region from the drain region.
 14. Themethod of claim 7, wherein the first semiconductor region has a firstdoping conductivity type and the second semiconductor region has asecond doping conductivity type opposite the first doping conductivitytype.
 15. The method of claim 14, wherein the first semiconductor regionis a p-well region and the dopants which are selectively implanted intothe first semiconductor region comprise an n-type species.
 16. Themethod of claim 14, wherein the first semiconductor region is an n-wellregion and the dopants which are selectively implanted into the firstsemiconductor region comprise a p-type species.
 17. The method of claim7, wherein the first semiconductor region is a first n-well regionhaving a first doping concentration, and the second semiconductor regionis a second n-well region having a second doping concentration thatdiffers from the first doping concentration.
 18. The method of claim 7,wherein selectively implanting the dopants is performed with animplantation energy that is less than 50 kiloelectron volts (keV). 19.The method of claim 7, wherein the recesses have depths of betweenapproximately 5 nanometers and approximately 20 nanometers.
 20. A methodof forming a transistor device, comprising: providing a plurality ofdoped semiconductor regions in a semiconductor substrate, wherein theplurality of doped semiconductor regions have different etch rates fromone another; selectively implanting dopant atoms into one or more firstdoped regions selected from the plurality of doped semiconductor regionsto alter a first etch rate of the one or more first doped regions to beequal to a second etch rate of one or more second doped regions of theplurality of doped semiconductor regions; and etching the one or morefirst doped regions and the one or more second doped regions to formrecesses having equal recess depths in the semiconductor substrate.